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  Datasheet File OCR Text:
 MBCR10D THRU MBCR10M
MINIATURE SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 1.0 Ampere
D TENTE PA
0.213(5.40) 0.205(5.20) 0.132(3.35) 0.128(3.25) 0.047(1.20)
MBCR
Mounting Pad Layout
0.165(4.20) 0.157(4.00)
FEATURES
* Internal Constructure with GPRC (Glass Passivated Rectifier Chip) inside * Lead free product * Leadless chip form , no lead damage * Solder Joint , No Wire bond & Lead Frame * Low profile package * For surface mounted applications * Built-in strain relief * Low power loss , High efficiency * High current capability * High surge capacity * Plastic package has Underwriters Laboratory Flammability Classification 94V-0
0.039(1.00) 0.232(5.90)
0.224(5.70)
0.229(5.82) 0.040(1.0) 0.031(0.8)
0.063(1.60)
~
R0 .2
0.037(0.95) 0.033(0.85)
~
0.051(1.30) 0.043(1.10)
0.055(1.40)
0.221(5.62)
MECHANICAL DATA
*Dimensions in inches and (millimeters) Case : Packed with FRP substrate and epoxy underfilled Terminals : Tin plated , solderable per MIL-STD-750, Method 2026 Polarity : Laser marking Weight : 0.07 gram
SuperBridge with GPRC inside
TM
TM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current @ TA=55 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) @ IF=0.4 A Maximum instantaneous forward voltage @ IF=1.0 A @TC=25 C @TC=150 C
o o o o
SYMBOLS VRRM VRMS VDC I (AV)
MBCR10D 200 140 200
MBCR10G
400 280 400
MBCR10J
600 420 600
MBCR10K
800 560 800
MBCR10M
1000 700 1000
UNITS Volts Volts Volts Amps
1.0
IFSM
30
Amps
VF
0.9 1.0 5
Volts
Maximum DC reverse current at rated DC blocking voltage I2t rating for fusing ( t < 8.3ms )
IR I2t CJ R
JA
200 3.74 25 110 -55 to +175
o
uA
2
As pF C/W
o
Typical junction capacitance per element (NOTE 1) Typical thermal resistance, junction to ambient (NOTE 2) Operating junction and storage temperature range
TJ,TSTG
C
NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. (2) Thermal resistance, junction to ambient, measured on PC board with 5.0mm2 (0.03mm thick) land areas.
05/2004
Zowie Technology Corporation
RATINGS AND CHARACTERISTIC CURVES MBCR10D THRU MBCR10M
FIG.1 - FORWARD CURRENT DERATING CURVE 1.2
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 40 PEAK FORWARD SURGE CURRENT, AMPERES
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method)
1.0 0.8 0.6 0.4 0.2
60 Hz Resistive or Inductive load
30
20
10
0 0 25 50 75 100 125
o
0 150 175 1 10 NUMBER OF CYCLES AT 60Hz 100
AMBIENT TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10.00 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT 100
IINSTANTANEOUS FORWARD CURRENT, AMPERES
10.0
TJ=100 C
o
1.00
1.0
0.10
0.10
TJ=25 C
o
0.01 0.2
TJ=25 C PULSE WIDTH=300uS
o
0.01 1.6 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,%
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCE, pF
TJ = 25 C
o
10
1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, VOLTS
05/2004
Zowie Technology Corporation


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